applications of tin selenide

3 Soliman et al. (1978) –Istituto di Fisica del Politecnico, Milano Calculated bandgap: 2.1 eV Experimental value (Albers et al. This is the highest value reported to date. SnSe powder has been prepared using chemical precipitation method in deionized water. Unlike tin oxides which are insulators, tin selenide is a narrow band gap semiconductor and is considered to be a promising material for several applications such as solar cells, optoelectronic devices and memory switching devices , , . Tin monoselenide (SnSe) and tin diselenide (SnSe 2) are promising candidates for solar cell applications, memory switching devices, etc , . 4 Tin selenide. Layered tin sulfides have attracted great interest as high-capacity anode materials in Li-ion batteries (LIBs) and Na-ion batteries (NIBs). of Physics, Ain Shams University, Cairo. (1962)): 0.9 eV 2. The chemical name for tin is stannum and is represented by Sn. This high ZT figure of merit has been attributed to an extremely low thermal conductivity found in the SnSe lattice. Tin is a silvery, soft and pliable metal which resists corrosion. The atomic number of tin is 50 and it is a period 4, group 4 element in the periodic table. Car et al. Tin selenide was synthesized by mechanical alloying method and the films were grown by economic screen-printing method on glass substrate. Tin selenide offer a range of optical band gaps suitable for various optical and optoelectronic applications. (1995) –Dept. In present investigations the structural properties of nanoparticles of Tin Selenide (SnSe) of group IV-VI semiconductors is reported. The nanocrystalline The structural, elemental, morphological, optical and electrical properties of the prepared films were investigated by X-ray diffraction (XRD), energy … The different thicknesses of SnSe thin films, from 150 nm to 500 nm, were grown on glass substrate held at room temperature. Tin selenide (SnSe) is a newly emerging layered material. Tin Selenide a p type and Nickel doped tin oxide n type deposited on a glass substrate will form a p-n junction. In 2014, researchers at Northwestern University discovered that tin selenide (SnSe) has a ZT of 2.6 along the b axis of the unit cell. It is one of the promising materials from its applications. SnSe with low dimensionality has been reported as an appealing material with a diverse range of applications such as rechargeable lithium-ion batteries, memory switching devices, solar energy conversion, thermoelectric energy conversion, and near-infrared optoelectronic devices. In this review, we focus on the recent research progress in the area of design and synthesis of tin sulfides and selenides (SnS, SnS2, SnSe, and SnSe2) based anode materials for LIBs and NIBs. It is also suitable for various optoelectronic applications like memory switching devices, light emitting devices (LED), holographic recording systems among others. Tin selenide can exist in two phases- hexagonal-phase SnSe 2 and orthorhombic-phase SnSe . The source materials used for the preparation of films were tin selenide and stannic chloride. Tin Selenide is a narrow band gap binary IV-VI semiconductor material. It is thus capable of absorbing a major portion of solar energy hence its use in fabricating solar cells. Introduction. Applications. Tin selenide Tin Selenide (SnSe) thin films were prepared from the pulverized compound material by thermal evaporation method, to study the effect of film thickness on its structural, and optical properties. 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